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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1213 DESCRIPTION With TO-3PN package Low collector saturation voltage Large current capacity. Complement to type 2SB904 APPLICATIONS Large current switching of relay drivers, high-speed inverters, converters. PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60 30 6 20 30 UNIT V V V A A Open emitter Emitter-base voltage Collector current (DC) Collector current (Pulse) Open collector TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 60 W 2.5 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE= IC=1mA; IE=0 IE=1mA; IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=10A ; VCE=2V IC=1A ; VCE=5V 70 30 MIN 30 60 6 2SD1213 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V 0.4 0.1 0.1 280 V mA mA Switching times ton ts tf Fall time Turn-on time Storage time hFE-1 Classifications Q 70-140 R 100-200 S 140-280 INC E SEM ANG H IC=10A;IB1=-IB2=-0.5A VCC=10V ;RL=1| OND IC TOR UC 0.3 0.6 0.02 120 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1213 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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